Investigation of Dielectric Properties of Ni/n-TiO2/p-Si/Al Heterojunction in Wide Range of Temperature and Voltage

In the present study we have investigated dielectric properties such as constant (ε'), loss (ε"), real part of electrical modulus (M'), imaginary electric (M") and AC conductivity, (σac) in wide range applied voltage, temperature frequency for Ni/n-TiO2/p-Si/Al heterojunction. A nanocrystalline TiO2 layer was grown on p-type boron doped silicon oxygen-controlled environment using optimized KrF excimer laser. Ohmic contact pure nickel aluminum metals made respectively, with thermal coating system. The characteristics obtained help conductance-voltage capacitance-voltage measurements also known impedance/admittance spectroscopy. studied parameters are found to be very sensitive frequency, voltage. restructuring reordering interface state density due variations interfacial polarizations collectively result observed changes . With an increase conductivity increases. relaxation mechanism can complex analysis. thermally activated conduction process indicated by dependent at different temperatures. Using power law, analyzed temperature,